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Chapter 3: Current Electricity

Electrostatics dealt with charges at rest. Current electricity studies charges in steady, controlled motion — the basis of every wire, circuit, motor, and electronic device. We connect three levels of description:

  1. Microscopic: electrons drifting under an applied field, giving rise to current density J⃗\vec{J}.
  2. Macroscopic: Ohm's law V=IRV = IR, with RR characterizing a piece of material.
  3. Circuit: Kirchhoff's laws, used to analyze networks of resistors and EMF sources.

By the end of the chapter you can analyze Wheatstone bridges, meter bridges, and potentiometers — the precision instruments of 19th-century physics, still the conceptual core of measurement labs today.

Concept Map

  • 3.1 Electric current, current density, drift velocity, mobility
  • 3.2 Ohm's law — microscopic and macroscopic forms
  • 3.3 Resistivity & conductivity; temperature dependence; metals vs alloys vs semiconductors
  • 3.4 Colour code of carbon resistors
  • 3.5 Combination of resistors — series and parallel
  • 3.6 EMF, internal resistance, terminal voltage
  • 3.7 Cells in series and parallel
  • 3.8 Kirchhoff's laws (KCL, KVL)
  • 3.9 Wheatstone bridge — balance condition
  • 3.10 Meter bridge
  • 3.11 Potentiometer — EMF comparison and internal resistance
  • 3.12 Electrical energy and power; heating effect

3.1 Electric Current, Current Density, Drift Velocity, Mobility

Definition — Current

Electric current II is the rate of flow of charge across a cross-section:

I=dQdt.I = \frac{dQ}{dt}.

Unit. Ampere (1 A=1 C/s1\text{ A} = 1\text{ C/s}).

Current is a scalar (it has magnitude and a chosen direction along a wire, but does not transform as a vector). The conventional direction is the direction of ++ charge flow (opposite to electron flow in metals).

Definition — Current Density

J⃗\vec{J} is current per unit (cross-section) area, vectorially along the direction of positive flow:

I=∫J⃗⋅dA⃗,J=IA (uniform case).I = \int \vec{J}\cdot d\vec{A}, \qquad J = \frac{I}{A}\text{ (uniform case)}.

Unit. A/m2\text{A/m}^2.

Derivation — Drift Velocity

In a metal, free electrons (number density nn, charge −e-e, mass mm) move randomly with thermal speeds ∼106 m/s\sim 10^6\text{ m/s} but the net displacement is zero. Applying a field E⃗\vec{E} tilts the distribution; the average velocity of electrons in the direction opposite to E⃗\vec{E} is the drift velocity v⃗d\vec{v}_d.

Step 1. Force on each electron: F⃗=−eE⃗\vec{F} = -e\vec{E}, giving acceleration a⃗=−eE⃗/m\vec{a} = -e\vec{E}/m.

Step 2. Each electron picks up velocity v⃗=u⃗+a⃗t\vec{v} = \vec{u} + \vec{a}t (where u⃗\vec{u} is its random thermal velocity) until it collides. Between collisions, average free time is τ\tau (the "relaxation time"). The average random velocity is zero, so:

v⃗d=⟨v⃗⟩=a⃗τ=−eE⃗τm.\vec{v}_d = \langle\vec{v}\rangle = \vec{a}\tau = -\frac{e\vec{E}\tau}{m}.

Step 3. Magnitude:

 vd=eEτm .\boxed{\,v_d = \frac{eE\tau}{m}\,}.

For copper at room temp under E∼1 V/mE\sim 1\text{ V/m}: vd∼10−4 m/sv_d \sim 10^{-4}\text{ m/s} — about 4 cm/min4\text{ cm/min}! Electron signals propagate at light speed because the field changes throughout the wire almost instantly.

Derivation — Relation I=nAevdI = nAev_d

In time dtdt, all electrons within a length vd dtv_d\,dt of the cross-section will cross it.

  • Volume swept: Avd dtA v_d\,dt.
  • Number of electrons: nAvd dtnA v_d\,dt.
  • Charge: −e⋅nAvd dt-e\cdot nAv_d\,dt, magnitude eAnvd dteAnv_d\,dt.
  • Current (magnitude): I=nAevdI = nAev_d.

In vector form: J⃗=nev⃗d\vec{J} = ne\vec{v}_d (with the convention that v⃗d\vec{v}_d refers to the velocity of ++ carriers, or equivalently −v⃗electron-\vec{v}_{\text{electron}}). So

 J⃗=nev⃗d .\boxed{\,\vec{J} = ne\vec{v}_d\,}.

Mobility

The mobility μ\mu of a carrier is the magnitude of its drift velocity per unit applied field:

 μ=∣vd∣E=eτm ,[μ]=m2/(V s).\boxed{\,\mu = \frac{|v_d|}{E} = \frac{e\tau}{m}\,}, \qquad [\mu] = \text{m}^2/(\text{V s}).

Worked Example

A copper wire (n=8.5×1028 m−3n = 8.5\times 10^{28}\text{ m}^{-3}) of cross-section 1 mm21\text{ mm}^2 carries 5 A5\text{ A}. Find vdv_d.

vd=InAe=5(8.5×1028)(10−6)(1.6×10−19)≈3.7×10−4 m/s.v_d = \frac{I}{nAe} = \frac{5}{(8.5\times 10^{28})(10^{-6})(1.6\times 10^{-19})} \approx 3.7\times 10^{-4}\text{ m/s}.

Pitfalls

  • vdv_d is tiny compared to thermal speed; the signal (field) propagates at cc.
  • JJ is a vector; II is a scalar (line integral).
  • In semiconductors, two types of carriers (electrons and holes) contribute: J=neve+pevhJ = nev_e + pev_h.

3.2 Ohm's Law

Microscopic Form

Combining J⃗=nev⃗d\vec{J} = ne\vec{v}_d and v⃗d=eE⃗τ/m\vec{v}_d = e\vec{E}\tau/m (with sign absorbed):

J⃗=ne2τm E⃗=σE⃗,\vec{J} = \frac{ne^2\tau}{m}\,\vec{E} = \sigma\vec{E},

where the conductivity is

 σ=ne2τm ,ρ=1σ=mne2τ.\boxed{\,\sigma = \frac{ne^2\tau}{m}\,}, \qquad \rho = \frac{1}{\sigma} = \frac{m}{ne^2\tau}.

Macroscopic Form — Derivation V=IRV = IR

Consider a uniform conductor of length LL, cross-section AA, conductivity σ\sigma.

Step 1. Apply potential difference VV across the ends: E=V/LE = V/L.

Step 2. Current density: J=σE=σV/LJ = \sigma E = \sigma V/L.

Step 3. Current: I=JA=σVA/LI = JA = \sigma V A/L, so

V=LσAI=ρLA I=IR,V = \frac{L}{\sigma A}I = \rho\frac{L}{A}\,I = IR,

where the resistance is

 R=ρ LA .\boxed{\,R = \rho\,\frac{L}{A}\,}.

Unit of RR. Ohm (Ω=V/A\Omega = \text{V/A}). Unit of ρ\rho: Ω⋅m\Omega\cdot\text{m}.

Limits of Validity

Ohm's law V∝IV \propto I holds for ohmic materials (most metals, at constant temperature). It fails for:

  • Non-ohmic devices (diodes, transistors, vacuum tubes).
  • Materials at very high EE (where avalanche or breakdown occurs).
  • At very high currents (Joule heating changes RR).

Worked Example

A wire of length 1 m1\text{ m}, cross-section 1 mm21\text{ mm}^2, has resistivity 1.7×10−8 Ωm1.7\times 10^{-8}\,\Omega\text{m}. Resistance:

R=(1.7×10−8)(1)10−6=0.017 Ω.R = \frac{(1.7\times 10^{-8})(1)}{10^{-6}} = 0.017\,\Omega.

Pitfalls

  • Ohm's law is an empirical relation, not a fundamental law of physics — many real materials violate it.
  • V=IRV = IR requires both VV and II to be measured at the same instant for the same element.

3.3 Resistivity, Conductivity, Temperature Dependence

Temperature Dependence

For most metals over a moderate range:

 ρ(T)=ρ0[1+α(T−T0)] ,\boxed{\,\rho(T) = \rho_0\bigl[1 + \alpha(T - T_0)\bigr]\,},

where α\alpha is the temperature coefficient of resistivity (units K−1\text{K}^{-1}).

For metals: α>0\alpha > 0 (resistance increases with TT, because relaxation time τ\tau decreases as lattice vibrations grow).

For semiconductors: α<0\alpha < 0 (more charge carriers thermally excited; nn rises faster than τ\tau falls).

For alloys (e.g., manganin, constantan, nichrome): α\alpha is very small — these are used in standard resistors.

Resistivity Comparison

Materialρ\rho (Ω m\Omega\text{ m}) at 20°C20°\text{C}α\alpha (K−1\text{K}^{-1})
Silver1.6×10−81.6\times 10^{-8}0.00380.0038
Copper1.7×10−81.7\times 10^{-8}0.00390.0039
Aluminium2.7×10−82.7\times 10^{-8}0.00390.0039
Tungsten5.6×10−85.6\times 10^{-8}0.00450.0045
Nichrome1.1×10−61.1\times 10^{-6}0.00040.0004
Manganin4.4×10−74.4\times 10^{-7}0.000020.00002
Constantan4.9×10−74.9\times 10^{-7}0.000010.00001
Germanium0.460.46−0.048-0.048
Silicon2.3×1032.3\times 10^{3}−0.075-0.075
Glass1010−101410^{10}-10^{14}—

Worked Example

A copper coil has R=5.0 ΩR = 5.0\,\Omega at 20°C20°\text{C}. Find RR at 80°C80°\text{C}.

R=R0[1+αΔT]=5.0[1+0.0039⋅60]=5.0[1.234]=6.17 Ω.R = R_0[1+\alpha\Delta T] = 5.0[1+ 0.0039\cdot 60] = 5.0[1.234] = 6.17\,\Omega.

Pitfalls

  • "Resistance" and "resistivity" are different — RR depends on geometry, ρ\rho does not.
  • At very low TT, some metals show superconductivity (ρ→0\rho \to 0) — beyond linear law.
  • Carbon resistors have negative α\alpha but are not classed as semiconductors here.

3.4 Carbon Resistor Colour Code

A standard carbon resistor has four colour bands:

  • Band 1, 2: first two significant digits.
  • Band 3: multiplier (power of 10).
  • Band 4: tolerance (±\pm %).
ColourDigitMultiplierTolerance
Black010010^0—
Brown110110^1±1%\pm 1\%
Red210210^2±2%\pm 2\%
Orange310310^3—
Yellow410410^4—
Green510510^5—
Blue610610^6—
Violet710710^7—
Grey810810^8—
White910910^9—
Gold—10−110^{-1}±5%\pm 5\%
Silver—10−210^{-2}±10%\pm 10\%
No colour——±20%\pm 20\%

Mnemonic: "B B ROY of Great Britain has a Very Good Wife".

Worked Example

A resistor has bands: Yellow, Violet, Orange, Gold.

  • 4, 7, ×103\times 10^3, ±5%\pm 5\%
  • R=47×103=47 kΩ±5%R = 47\times 10^3 = 47\,\text{k}\Omega \pm 5\%.

3.5 Combination of Resistors

Series — Derivation

Current II is the same in all; voltages add:

V=V1+V2+⋯=I(R1+R2+⋯ )=IReq.V = V_1+V_2+\cdots = I(R_1+R_2+\cdots) = IR_{\text{eq}}.  Rseries=R1+R2+⋯+Rn .\boxed{\,R_{\text{series}} = R_1+R_2+\cdots+R_n\,}.

The equivalent resistance is larger than the largest individual resistor.

Parallel — Derivation

Voltage VV is the same across all; currents add:

I=I1+I2+⋯=V(1R1+1R2+⋯ )=V/Req.I = I_1+I_2+\cdots = V\left(\frac{1}{R_1}+\frac{1}{R_2}+\cdots\right) = V/R_{\text{eq}}.  1Rparallel=1R1+1R2+⋯+1Rn .\boxed{\,\frac{1}{R_{\text{parallel}}} = \frac{1}{R_1}+\frac{1}{R_2}+\cdots+\frac{1}{R_n}\,}.

For two resistors in parallel: Req=R1R2/(R1+R2)R_{\text{eq}} = R_1R_2/(R_1+R_2). Equivalent resistance is smaller than the smallest.

Worked Example

Three resistors 2,3,6 Ω2, 3, 6\,\Omega.

  • Series: 11 Ω11\,\Omega.
  • Parallel: 1/R=1/2+1/3+1/6=1⇒R=1 Ω1/R = 1/2 + 1/3 + 1/6 = 1 \Rightarrow R = 1\,\Omega.
  • Mixed (2 Ω2\,\Omega in series with 3∥63\parallel 6): 3∥6=2 Ω3\parallel 6 = 2\,\Omega; total =4 Ω= 4\,\Omega.

Pitfalls

  • Watch the polarity in series; in parallel ensure both ends share the same node pair.
  • "Same current" in series, "same voltage" in parallel.

3.6 EMF and Internal Resistance

Definitions

The electromotive force (EMF) ε\varepsilon of a cell is the energy supplied by the cell per unit charge as it pushes charge around the complete circuit — its open-circuit terminal voltage.

A real cell has an internal resistance rr (modelled as in series with the ideal EMF).

When current II flows out of the ++ terminal:

Vterminal=ε−Ir.V_{\text{terminal}} = \varepsilon - Ir.
  • On discharge (I>0I>0): V<εV < \varepsilon.
  • On open circuit (I=0I=0): V=εV = \varepsilon.
  • When charging the cell (forcing current into ++ terminal): V=ε+Ir>εV = \varepsilon + Ir > \varepsilon.

Derivation — Closed-Circuit Current

Connect a cell (ε\varepsilon, rr) to an external resistance RR:

ε=I(R+r)⇒I=εR+r.\varepsilon = I(R+r) \Rightarrow I = \frac{\varepsilon}{R+r}.

Terminal voltage: V=IR=εR/(R+r)=ε−IrV = IR = \varepsilon R/(R+r) = \varepsilon - Ir.

Power Delivered to Load

P=I2R=ε2R(R+r)2.P = I^2 R = \frac{\varepsilon^2 R}{(R+r)^2}.

Maximum power transfer: dP/dR=0dP/dR = 0 gives R=rR = r. Then Pmax⁡=ε2/(4r)P_{\max} = \varepsilon^2/(4r) — half the EMF is dissipated inside the cell.

Worked Example

A 1.5 V1.5\text{ V} cell with r=0.5 Ωr = 0.5\,\Omega drives a 4 Ω4\,\Omega resistor. Find II, terminal voltage, and power dissipated in the load.

I=1.5/4.5=1/3 A,V=1.5−(1/3)(0.5)=1.333 V,PR=I2R=(1/9)(4)=0.444 W.I = 1.5/4.5 = 1/3\,\text{A}, \quad V = 1.5 - (1/3)(0.5) = 1.333\text{ V}, \quad P_R = I^2 R = (1/9)(4) = 0.444\text{ W}.

Pitfalls

  • Internal resistance is not a physical resistor; it represents irreversibilities inside the cell.
  • ε\varepsilon is not directly the voltage you measure across a working cell — voltmeters read VV, not ε\varepsilon (except on open circuit).

3.7 Cells in Series and Parallel

Series — same direction

nn identical cells (each ε,r\varepsilon, r) and external RR:

I=nεR+nr.I = \frac{n\varepsilon}{R + nr}.
  • R≫nrR\gg nr: I≈nε/RI\approx n\varepsilon/R (gain by stacking voltage).
  • R≪nrR\ll nr: I≈ε/rI\approx \varepsilon/r (no improvement; using nn cells in series for tiny loads wastes them).

Parallel — same polarity

mm identical cells in parallel:

I=εR+r/m.I = \frac{\varepsilon}{R + r/m}.
  • Useful when R≪rR\ll r: I≈mε/rI\approx m\varepsilon/r.
  • Useful when rr is large (or you want to deliver large current to a small load).

Mixed (m rows, n cells in each row)

Total cells N=mnN = mn. Equivalent EMF =nε= n\varepsilon, equivalent internal resistance =nr/m= nr/m:

I=nεR+nr/m=mnεmR+nr.I = \frac{n\varepsilon}{R + nr/m} = \frac{mn\varepsilon}{mR+nr}.

Maximum when R=nr/mR = nr/m (matched), giving Imax⁡=mnε/(2nr)=mε/(2r)I_{\max} = mn\varepsilon/(2nr) = m\varepsilon/(2r).

Cells in Parallel — Different EMFs (general)

Two cells ε1,r1\varepsilon_1, r_1 and ε2,r2\varepsilon_2, r_2 in parallel across RR:

εeq=ε1/r1+ε2/r21/r1+1/r2,req=r1r2r1+r2.\varepsilon_{\text{eq}} = \frac{\varepsilon_1/r_1 + \varepsilon_2/r_2}{1/r_1 + 1/r_2}, \qquad r_{\text{eq}} = \frac{r_1 r_2}{r_1+r_2}.

Pitfalls

  • For cells opposing in series, EMFs subtract.
  • Connecting unequal cells in parallel produces internal circulation currents.

3.8 Kirchhoff's Laws

KCL — Junction Rule

At any junction, the algebraic sum of currents is zero (charge conservation):

∑inI=∑outI.\sum_{\text{in}} I = \sum_{\text{out}} I.

KVL — Loop Rule

Around any closed loop, the algebraic sum of EMFs and IRIR drops is zero (energy conservation):

∑ε=∑IR.\sum \varepsilon = \sum IR.

Sign Convention

Going around a loop in a chosen direction:

  • Cross a resistor in the direction of current: −IR-IR.
  • Cross against the current: +IR+IR.
  • Cross a cell from −- to ++ internally: +ε+\varepsilon.
  • Cross a cell from ++ to −- internally: −ε-\varepsilon.

Worked Example

Circuit with two cells: ε1=6 V,r1=1 Ω\varepsilon_1 = 6\text{ V}, r_1 = 1\,\Omega in series with R1=2 ΩR_1 = 2\,\Omega; second loop has ε2=4 V,r2=1 Ω\varepsilon_2 = 4\text{ V}, r_2 = 1\,\Omega and R2=3 ΩR_2 = 3\,\Omega; loops share resistor R3=4 ΩR_3 = 4\,\Omega.

Set up mesh currents I1,I2I_1, I_2 in each loop (both clockwise). KVL loop 1:

ε1=I1(r1+R1+R3)−I2R3⇒6=7I1−4I2.\varepsilon_1 = I_1(r_1+R_1+R_3) - I_2 R_3 \Rightarrow 6 = 7I_1 - 4I_2.

KVL loop 2: 4=−4I1+8I24 = -4I_1 + 8I_2.

Solve: From the second, I1=2I2−1I_1 = 2I_2 - 1. Substitute: 6=7(2I2−1)−4I2=10I2−76 = 7(2I_2 - 1) - 4I_2 = 10I_2 - 7, so I2=1.3I_2 = 1.3 A. Then I1=1.6I_1 = 1.6 A. Current through R3R_3 is I1−I2=0.3I_1 - I_2 = 0.3 A.

Pitfalls

  • Set up consistent loop directions; don't mix sign conventions mid-problem.
  • KCL is exact; KVL holds only in the static (or quasi-static) regime.

3.9 Wheatstone Bridge

Setup

Four resistors P,Q,R,SP, Q, R, S in a diamond. A galvanometer GG bridges the diagonal; a cell drives current across the other diagonal. The bridge is balanced when no current flows through GG.

Derivation — Balance Condition

Let the bridge be balanced. The currents in PP and QQ are equal (I1I_1); in RR and SS are equal (I2I_2); galvanometer carries zero current.

Step 1. Points BB and DD are at the same potential (no current through GG).

Step 2. Drop across PP equals drop across RR: I1P=I2RI_1 P = I_2 R.

Step 3. Drop across QQ equals drop across SS: I1Q=I2SI_1 Q = I_2 S.

Step 4. Divide:

 PQ=RS .\boxed{\,\frac{P}{Q} = \frac{R}{S}\,}.

Applications

  • Precise measurement of an unknown resistance (one arm).
  • Meter bridge and post-office box are practical implementations.

Worked Example

P=10 ΩP = 10\,\Omega, Q=20 ΩQ = 20\,\Omega, S=30 ΩS = 30\,\Omega. For balance, R=PS/Q=10⋅30/20=15 ΩR = PS/Q = 10\cdot 30/20 = 15\,\Omega.

Pitfalls

  • The cell's EMF and internal resistance do not affect the balance condition.
  • The galvanometer's sensitivity matters for detecting balance, but not for the condition itself.

3.10 Meter Bridge

Principle

A meter bridge is a practical Wheatstone bridge with two arms (P,QP, Q) replaced by sections of a uniform resistance wire of length 1 m1\text{ m}. Sliding a jockey along the wire varies the resistance ratio continuously.

Working

Let the bridge wire be split at the jockey point into lengths ℓ\ell (from AA to jockey) and (100−ℓ)(100-\ell) cm (jockey to CC). Resistances are proportional to length (uniform wire):

PQ=ℓ100−ℓ.\frac{P}{Q} = \frac{\ell}{100-\ell}.

At balance:

RS=ℓ100−ℓ⇒R=S⋅ℓ100−ℓ.\frac{R}{S} = \frac{\ell}{100-\ell} \Rightarrow R = S\cdot\frac{\ell}{100-\ell}.

To find unknown XX: put a known SS in one gap and XX in the other; find balance length ℓ\ell — then X=Sℓ/(100−ℓ)X = S\ell/(100-\ell).

Pitfalls

  • The wire must be uniform in cross-section.
  • End corrections (effective small lengths added at each end) are sometimes needed for precise work.

3.11 Potentiometer

Principle

A potentiometer uses a long, uniform resistance wire driven by a primary circuit (steady cell + rheostat). The potential drop along the wire is uniform per unit length:

Vper cm=k=IRwire/L,V_{\text{per cm}} = k = IR_{\text{wire}}/L,

called the potential gradient.

A test EMF connected to a fraction of this wire (via a galvanometer with no current at balance) is measured by the balance length — without drawing current from the test cell.

Comparison of Two EMFs

Connect cells ε1,ε2\varepsilon_1, \varepsilon_2 in turn, finding balance lengths ℓ1,ℓ2\ell_1, \ell_2:

ε1=kℓ1,ε2=kℓ2⇒ ε1ε2=ℓ1ℓ2 .\varepsilon_1 = k\ell_1, \quad \varepsilon_2 = k\ell_2 \Rightarrow \boxed{\,\frac{\varepsilon_1}{\varepsilon_2} = \frac{\ell_1}{\ell_2}\,}.

Internal Resistance of a Cell

Connect the test cell to the potentiometer. Find balance length ℓ1\ell_1 (open circuit, EMF = ε\varepsilon).

Now close the cell through a resistor RR. The terminal voltage drops to V=εR/(R+r)V = \varepsilon R/(R+r). Find new balance length ℓ2\ell_2. Then:

εV=ℓ1ℓ2=R+rR⇒ r=R(ℓ1ℓ2−1) .\frac{\varepsilon}{V} = \frac{\ell_1}{\ell_2} = \frac{R+r}{R} \Rightarrow \boxed{\,r = R\left(\frac{\ell_1}{\ell_2} - 1\right)\,}.

Why a Potentiometer Beats a Voltmeter

A voltmeter draws some current from the test cell, so it reads VV, not ε\varepsilon. The potentiometer at balance draws zero current — it is an ideal voltmeter. Sensitivity can be improved by lengthening the wire or reducing the gradient kk.

Worked Example

A cell of unknown EMF gives balance at 80 cm80\text{ cm} when the potential gradient is 0.01 V/cm0.01\text{ V/cm}. EMF =0.01×80=0.8 V= 0.01\times 80 = 0.8\text{ V}.

Pitfalls

  • The driver cell EMF must exceed the test cell EMF — otherwise no balance exists.
  • The galvanometer should deflect in opposite directions at the two ends; if not, leads are reversed.
  • If sliding jockey is pressed too long, the wire heats — wait between measurements.

3.12 Electrical Energy and Power

Power Delivered to a Resistor

A current II through a potential drop VV does work at rate

P=VI=I2R=V2R.P = VI = I^2 R = \frac{V^2}{R}.

Unit. Watt (1 W=1 J/s1\text{ W} = 1\text{ J/s}). All this power becomes heat (Joule heating).

Energy Consumed

E=PtE = Pt. The commercial unit is the kilowatt-hour:

1 kWh=(103 W)(3600 s)=3.6×106 J.1\text{ kWh} = (10^3\text{ W})(3600\text{ s}) = 3.6\times 10^6\text{ J}.

Joule's Heating Law

Heat produced in time tt:

H=I2Rt.H = I^2 R t.

Used in: incandescent bulbs (tungsten filament, ρ\rho rises with TT); electric heaters (nichrome, high ρ\rho, low α\alpha); fuses (low melting alloy).

Worked Example

A 60 W,220 V60\text{ W}, 220\text{ V} bulb is operated at 220 V220\text{ V}.

  • Operating resistance: R=V2/P=2202/60≈807 ΩR = V^2/P = 220^2/60 \approx 807\,\Omega.
  • Current: I=P/V=60/220≈0.273 AI = P/V = 60/220 \approx 0.273\text{ A}.
  • Energy used in 10 h10\text{ h}: E=0.6 kWhE = 0.6\text{ kWh}.

Maximum Power Transfer

(See 3.6.) PRP_R is maximum when R=rR = r, giving Pmax⁡=ε2/(4r)P_{\max} = \varepsilon^2/(4r).

Pitfalls

  • P=V2/RP = V^2/R — at constant VV, smaller RR means more power; at constant II, larger RR means more power.
  • Bulbs rated at VV, PP: the resistance computed via R=V2/PR = V^2/P applies at the rated voltage, where the filament is hot. At room temperature, RR is several times smaller.

Solved Problems

Problem 1 (Easy)

A wire of resistance 10 Ω10\,\Omega is bent into a circle. Find the resistance between two diametrically opposite points.

Solution. The two semicircles each have resistance 5 Ω5\,\Omega, connected in parallel between the two endpoints: Req=5/2=2.5 ΩR_{\text{eq}} = 5/2 = 2.5\,\Omega.

Problem 2 (Easy)

A 2 A2\text{ A} current flows through a wire of cross-section 10−6 m210^{-6}\text{ m}^2 with n=1029 m−3n = 10^{29}\text{ m}^{-3}. Find vdv_d.

vd=I/(nAe)=2/(1029⋅10−6⋅1.6×10−19)=1.25×10−4 m/s.v_d = I/(nAe) = 2/(10^{29}\cdot 10^{-6}\cdot 1.6\times 10^{-19}) = 1.25\times 10^{-4}\text{ m/s}.

Problem 3 (Medium)

Two cells of EMF 2 V2\text{ V} each with internal resistance 1 Ω1\,\Omega each are connected in parallel across a 3 Ω3\,\Omega external resistance. Find the current through the external resistor.

εeq=2 V\varepsilon_{\text{eq}} = 2\text{ V}, req=0.5 Ωr_{\text{eq}} = 0.5\,\Omega. I=2/(3+0.5)=4/7≈0.571 AI = 2/(3+0.5) = 4/7 \approx 0.571\text{ A}.

Problem 4 (Medium)

In a Wheatstone bridge, P=100 ΩP = 100\,\Omega, Q=10 ΩQ = 10\,\Omega, and the unknown RR balances when S=1 ΩS = 1\,\Omega. Find RR.

P/Q=R/S⇒R=PS/Q=100⋅1/10=10 ΩP/Q = R/S \Rightarrow R = PS/Q = 100\cdot 1/10 = 10\,\Omega.

Problem 5 (Medium)

A potentiometer wire is 400 cm400\text{ cm} long, driven by a 4 V4\text{ V} cell with negligible internal resistance and a series rheostat that drops 2 V2\text{ V}. Find the potential gradient. A standard cell of 1.5 V1.5\text{ V} — at what length does it balance?

Voltage across the wire =4−2=2 V= 4 - 2 = 2\text{ V}. Gradient: k=2/400=5×10−3 V/cmk = 2/400 = 5\times 10^{-3}\text{ V/cm}. Balance length ℓ=1.5/k=300 cm\ell = 1.5/k = 300\text{ cm}.

Problem 6 (Hard) — Kirchhoff Analysis

A cell ε=12 V\varepsilon = 12\text{ V} with r=1 Ωr = 1\,\Omega drives a network: R1=3 ΩR_1 = 3\,\Omega in series with the parallel combination of R2=6 ΩR_2 = 6\,\Omega and R3=12 ΩR_3 = 12\,\Omega. Find the current from the cell and the current through R3R_3.

R2∥R3=6⋅12/18=4 ΩR_2 \| R_3 = 6\cdot 12/18 = 4\,\Omega. Total external: R1+4=7 ΩR_1 + 4 = 7\,\Omega. Total: 8 Ω8\,\Omega. I=12/8=1.5 AI = 12/8 = 1.5\text{ A}. Voltage across the parallel combo: 1.5⋅4=6 V1.5\cdot 4 = 6\text{ V}. So IR3=6/12=0.5 AI_{R_3} = 6/12 = 0.5\text{ A}.

Problem 7 (Hard) — Temperature and Power

A heater is designed to consume 1 kW1\text{ kW} at 220 V220\text{ V} when its filament is at operating temperature TopT_{\text{op}}. The room-temperature resistance is 30 Ω30\,\Omega. Find the operating temperature (assume α=4×10−3 K−1\alpha = 4\times 10^{-3}\text{ K}^{-1}, room temp 30°C30°\text{C}).

Operating R=V2/P=48.4 ΩR = V^2/P = 48.4\,\Omega. Ratio R/R0=48.4/30=1.613=1+αΔTR/R_0 = 48.4/30 = 1.613 = 1 + \alpha\Delta T, so ΔT=0.613/0.004=153.3°C\Delta T = 0.613/0.004 = 153.3°\text{C}. Top≈183°CT_{\text{op}} \approx 183°\text{C}.

(In reality the filament is at ∼2500°C\sim 2500°\text{C}; the linear law breaks down at such high temperatures.)


JEE/NEET Edge Cases

  1. Drift velocity vs signal speed: vd∼10−4 m/sv_d \sim 10^{-4}\text{ m/s}; signals at ∼c\sim c. Don't confuse.

  2. Wire stretched to twice its length (volume constant): L→2LL \to 2L, A→A/2A \to A/2, so R→4RR \to 4R.

  3. Cells in series with opposing polarity: net EMF =ε1−ε2= \varepsilon_1 - \varepsilon_2. If ε2>ε1\varepsilon_2 > \varepsilon_1, cell 1 gets charged.

  4. Galvanometer with current IgI_g: full-scale deflection at IgI_g. Ammeter conversion: shunt S=IgG/(I−Ig)S = I_g G/(I - I_g). Voltmeter: series resistance R=V/Ig−GR = V/I_g - G.

  5. Equivalent resistance of an infinite ladder (each rung RR): R∞=R+R∥R∞R_\infty = R + R\|R_\infty leads to a self-consistent equation.

  6. Maximum power transfer: occurs at Rload=rinternalR_{\text{load}} = r_{\text{internal}}; efficiency at that point is 50%50\% — not what you want in a power grid.

  7. Bulb brightness: in parallel, the higher-rated (lower-RR) bulb is brighter. In series, the lower-rated (higher-RR) bulb is brighter.

  8. Carbon resistor's α\alpha is negative — but the magnitude is small enough that the color code is read as a fixed value.

  9. Superconductors: ρ=0\rho = 0 below TcT_c, magnetic field is expelled (Meissner effect).

  10. Mobility in semiconductors is much higher for electrons than for holes; this asymmetry is the basis of nn- and pp-type doping.


Quick Recap

  • I=dQ/dtI = dQ/dt; J=I/AJ = I/A; vd=eEτ/mv_d = eE\tau/m; I=nAevdI = nAev_d.
  • Ohm: V=IRV = IR, J=σEJ = \sigma E; R=ρL/AR = \rho L/A.
  • ρ(T)=ρ0(1+αΔT)\rho(T) = \rho_0(1 + \alpha\Delta T); αmetal>0\alpha_{\text{metal}}>0, αsemi<0\alpha_{\text{semi}}< 0.
  • Series: R=∑RiR = \sum R_i. Parallel: 1/R=∑1/Ri1/R = \sum 1/R_i.
  • EMF: V=ε−IrV = \varepsilon - Ir (discharge); I=ε/(R+r)I = \varepsilon/(R+r).
  • Wheatstone balance: P/Q=R/SP/Q = R/S.
  • Meter bridge: X=Sℓ/(100−ℓ)X = S\ell/(100-\ell).
  • Potentiometer EMF comparison: ε1/ε2=ℓ1/ℓ2\varepsilon_1/\varepsilon_2 = \ell_1/\ell_2.
  • P=VI=I2R=V2/RP = VI = I^2R = V^2/R; 1 kWh=3.6×106 J1\text{ kWh} = 3.6\times 10^6\text{ J}.

Formula Sheet

QuantityFormulaNotes
CurrentI=dQ/dtI = dQ/dtA
Drift velocityvd=eEτ/mv_d = eE\tau/m
Current densityJ⃗=nev⃗d\vec{J} = ne\vec{v}_dA/m²
Mobilityμ=eτ/m\mu = e\tau/mvd=μEv_d=\mu E
Conductivityσ=ne2τ/m\sigma = ne^2\tau/m
Microscopic OhmJ⃗=σE⃗\vec{J} = \sigma\vec{E}
ResistanceR=ρL/AR = \rho L/AΩ\Omega
Macroscopic OhmV=IRV = IR
Temperature lawρ=ρ0(1+αΔT)\rho = \rho_0(1+\alpha\Delta T)α\alpha in 1/K
Series RRR=∑RiR = \sum R_iSame II
Parallel RR1/R=∑1/Ri1/R = \sum 1/R_iSame VV
Terminal VV=ε−IrV = \varepsilon - IrDischarge
Closed loopI=ε/(R+r)I = \varepsilon/(R+r)
Series cellsI=nε/(R+nr)I = n\varepsilon/(R+nr)
Parallel cellsI=ε/(R+r/m)I = \varepsilon/(R+r/m)
KCL∑I=0\sum I = 0At junction
KVL∑ε=∑IR\sum\varepsilon = \sum IRLoop
WheatstoneP/Q=R/SP/Q = R/SBalance
Meter bridgeX=Sℓ/(100−ℓ)X = S\ell/(100-\ell)ℓ\ell in cm
Potentiometer EMFε1/ε2=ℓ1/ℓ2\varepsilon_1/\varepsilon_2 = \ell_1/\ell_2
Internal rrr=R(ℓ1/ℓ2−1)r = R(\ell_1/\ell_2 - 1)
PowerP=VI=I2R=V2/RP = VI = I^2R = V^2/RW
Energy1 kWh=3.6×1061\text{ kWh} = 3.6\times 10^6 J
Max power transferR=rR = rPmax⁡=ε2/(4r)P_{\max}=\varepsilon^2/(4r)

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